transistor (npn) features z low v ce(sat) , v ce(sat) =0.15v(typical).(i c /i b =500ma/50ma) z complements to 2sb1132 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 32 v v ebo emitter-base voltage 5 v i c collector current -continuous 1 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =50 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 32 v emitter-base breakdown voltage v (br)ebo i e =50 a, i c =0 5 v collector cut-off current i cbo v cb =20v, i e =0 0.5 a emitter cut-off current i ebo v eb =4v, i c =0 0.5 a dc current gain h fe v ce =3v, i c =100ma 82 390 collector-emitter saturation voltage v ce(sat) i c =0.5a, i b =50ma 0.4 v transition frequency f t v ce =5v, i c =50ma, f=100mhz 150 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 15 pf classification of h fe rank p q r range 82-180 120-270 180-390 marking dap daq dar sot-89 1. base 2. collector 3. emitter 1 2 3 2s d1664 1 www.htsemi.com semiconductor jinyu
2 www.htsemi.com semiconductor jinyu 2s d1664
3 www.htsemi.com semiconductor jinyu 2s d1664
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